S/TEM Observation of Catalyst Growth on a Si Substrate
نویسندگان
چکیده
منابع مشابه
Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process
The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nan...
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Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with crosssectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source g...
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Self-assembled nanowires offer the prospect of accurate and scalable device engineering at an atomistic scale for applications in electronics, photonics and biology. However, deterministic nanowire growth and the control of dopant profiles and heterostructures are limited by an incomplete understanding of the role of commonly used catalysts and specifically of their interface dynamics. Although...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2005
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927605503891